RJK0331DPB-01#J0

Renesas Electronics America Inc

Product No:

RJK0331DPB-01#J0

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Package:

LFPAK

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Description:

POWER FIELD-EFFECT TRANSISTOR

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3380 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	3.4mOhm @ 20A, 10V
Supplier Device Package	LFPAK
Vgs(th) (Max) @ Id	-
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	50W (Tc)
Package / Case	SC-100, SOT-669
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Package	Bulk