RQ7E110AJTCR

Rohm Semiconductor

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RQ7E110AJTCR

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Package:

TSMT8

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Description:

MOSFET N-CH 30V 11A TSMT8

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2410 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	9mOhm @ 4.5A, 11V
Supplier Device Package	TSMT8
Vgs(th) (Max) @ Id	1.5V @ 10mA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	1.5W (Tc)
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Package	Tape & Reel (TR)
Base Product Number	RQ7E110