RS1G201ATTB1

Rohm Semiconductor

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RS1G201ATTB1

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Package:

8-HSOP

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Description:

MOSFET P-CH 40V 20A/78A 8HSOP

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	6890 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	5.2mOhm @ 20A, 10V
Supplier Device Package	8-HSOP
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	40 V
Series	-
Power Dissipation (Max)	3W (Ta), 40W (Tc)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	20A (Ta), 78A (Tc)
Vgs (Max)	±20V
Package	Tape & Reel (TR)
Base Product Number	RS1G