RV4E031RPHZGTCR1

Rohm Semiconductor

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RV4E031RPHZGTCR1

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Package:

DFN1616-6W

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Description:

MOSFET P-CH 30V 3.1A DFN1616-6W

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	460 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	4.8 nC @ 5 V
Mounting Type	Surface Mount, Wettable Flank
Product Status	Active
Rds On (Max) @ Id, Vgs	105mOhm @ 3.1A, 10V
Supplier Device Package	DFN1616-6W
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	30 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	1.5W (Ta)
Package / Case	6-PowerWFDFN
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	3.1A (Ta)
Vgs (Max)	±20V
Package	Tape & Reel (TR)
Base Product Number	RV4E031