SCT3120AW7TL

Rohm Semiconductor

Product No:

SCT3120AW7TL

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Package:

TO-263-7

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Description:

SICFET N-CH 650V 21A TO263-7

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Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	460 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 18 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	156mOhm @ 6.7A, 18V
Supplier Device Package	TO-263-7
Vgs(th) (Max) @ Id	5.6V @ 3.33mA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	100W
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Vgs (Max)	+22V, -4V
Package	Tape & Reel (TR)
Base Product Number	SCT3120