SSM6J214FE(TE85L,F

Toshiba Semiconductor and Storage

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SSM6J214FE(TE85L,F

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Package:

ES6

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Description:

MOSFET P-CH 30V 3.6A ES6

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Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	560 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	7.9 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	50mOhm @ 3A, 10V
Supplier Device Package	ES6
Vgs(th) (Max) @ Id	1.2V @ 1mA
Drain to Source Voltage (Vdss)	30 V
Series	U-MOSVI
Power Dissipation (Max)	500mW (Ta)
Package / Case	SOT-563, SOT-666
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	3.6A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 10V
Package	Tape & Reel (TR)
Base Product Number	SSM6J214