SSM6J216FE,LF

Toshiba Semiconductor and Storage

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SSM6J216FE,LF

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Package:

ES6

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Description:

MOSFET P-CHANNEL 12V 4.8A ES6

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Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1040 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs	12.7 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	32mOhm @ 3.5A, 4.5V
Supplier Device Package	ES6
Vgs(th) (Max) @ Id	1V @ 1mA
Drain to Source Voltage (Vdss)	12 V
Series	U-MOSVI
Power Dissipation (Max)	700mW (Ta)
Package / Case	SOT-563, SOT-666
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	4.8A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SSM6J216