SSM6L39TU,LF

Toshiba Semiconductor and Storage

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SSM6L39TU,LF

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Package:

UF6

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Description:

MOSFET N/P-CH 20V 0.8A UF6

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Operating Temperature	150°C (TJ)
FET Feature	Logic Level Gate, 1.8V Drive
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	268pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	-
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	143mOhm @ 600MA, 4V
Supplier Device Package	UF6
Vgs(th) (Max) @ Id	1V @ 1mA
Drain to Source Voltage (Vdss)	20V
Series	-
Package / Case	6-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Power - Max	500mW
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	800mA
Package	Tape & Reel (TR)
Base Product Number	SSM6L39