SSM6N62TU,LXHF

Toshiba Semiconductor and Storage

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SSM6N62TU,LXHF

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Package:

UF6

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Description:

SMOS LOW RON DUAL NCH ID:0.8A, V

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Operating Temperature	150°C
FET Feature	Logic Level Gate, 1.2V Drive
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	177pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	2nC @ 4.5V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	85mOhm @ 800mA, 4.5V
Supplier Device Package	UF6
Vgs(th) (Max) @ Id	1V @ 1mA
Drain to Source Voltage (Vdss)	20V
Series	Automotive, AEC-Q101
Package / Case	6-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Power - Max	500mW (Ta)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	800mA (Ta)
Package	Tape & Reel (TR)
Base Product Number	SSM6N62