SSM6N7002KFU,LXH

Toshiba Semiconductor and Storage

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SSM6N7002KFU,LXH

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Package:

US6

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Description:

SMOS 2 IN 1 DUAL NCH HIGH ESD PR

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Operating Temperature	150°C
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	40pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	0.6nC @ 4.5V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.5Ohm @ 100mA, 10V
Supplier Device Package	US6
Vgs(th) (Max) @ Id	2.1V @ 250µA
Drain to Source Voltage (Vdss)	60V
Series	Automotive, AEC-Q101, U-MOSVII-H
Package / Case	6-TSSOP, SC-88, SOT-363
Technology	MOSFET (Metal Oxide)
Power - Max	285mW (Ta)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Package	Tape & Reel (TR)
Base Product Number	SSM6N7002