TK190U65Z,RQ

Toshiba Semiconductor and Storage

Product No:

TK190U65Z,RQ

Manufacturer:

Package:

TOLL

Batch:

Datasheet:

Description:

DTMOS VI TOLL PD=130W F=1MHZ

Quantity:

Delivery:

Payment:

In Stock : 2313

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	190mOhm @ 7.5A, 10V
Supplier Device Package	TOLL
Vgs(th) (Max) @ Id	4V @ 610µA
Drain to Source Voltage (Vdss)	650 V
Series	DTMOSVI
Power Dissipation (Max)	130W (Tc)
Package / Case	8-PowerSFN
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	15A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)