UPA2815T1S-E2-AT

Renesas Electronics America Inc

Product No:

UPA2815T1S-E2-AT

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Package:

8-HWSON (3.3x3.3)

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Description:

MOSFET P-CH 30V 21A 8HWSON

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1760 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	11mOhm @ 21A, 10V
Supplier Device Package	8-HWSON (3.3x3.3)
Vgs(th) (Max) @ Id	-
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	1.5W (Ta)
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	UPA2815