UPA2826T1S-E2-AT

Renesas Electronics America Inc

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UPA2826T1S-E2-AT

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Package:

8-HWSON (3.3x3.3)

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Description:

8P HWSON

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3610 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	37 nC @ 4 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	4.3mOhm @ 13.5A, 8V
Supplier Device Package	8-HWSON (3.3x3.3)
Vgs(th) (Max) @ Id	1.5V @ 1mA
Drain to Source Voltage (Vdss)	20 V
Series	-
Power Dissipation (Max)	20W (Ta)
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	27A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 8V
Package	Tape & Reel (TR)