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BSC600N25NS3GATMA1

Infineon Technologies

Prodotto No:

BSC600N25NS3GATMA1

Pacchetto:

PG-TDSON-8-1

Batch:

-

Scheda tecnica:

-

Descrizione:

MOSFET N-CH 250V 25A TDSON-8-1

Quantità:

Consegna:

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Pagamento:

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In magazzino : 1111

Minimo: 1 Multipli: 1

Qty

Prezzo unitario

Prezzo Ext

  • 1

    $3.2775

    $3.2775

  • 10

    $2.9431

    $29.431

  • 100

    $2.411005

    $241.1005

  • 500

    $2.052437

    $1026.2185

  • 1000

    $1.730976

    $1730.976

  • 2000

    $1.644431

    $3288.862

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 60mOhm @ 25A, 10V
Supplier Device Package PG-TDSON-8-1
Vgs(th) (Max) @ Id 4V @ 90µA
Drain to Source Voltage (Vdss) 250 V
Series OptiMOS™
Power Dissipation (Max) 125W (Tc)
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number BSC600