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IGT60R042D1ATMA1

Infineon Technologies

Prodotto No:

IGT60R042D1ATMA1

Pacchetto:

PG-HSOF-8-3

Batch:

-

Scheda tecnica:

-

Descrizione:

GAN HV

Quantità:

Consegna:

1.webp 4.webp 5.webp 2.webp 3.webp

Pagamento:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -
FET Feature -
FET Type -
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs -
Supplier Device Package PG-HSOF-8-3
Vgs(th) (Max) @ Id -
Drain to Source Voltage (Vdss) 600 V
Series CoolGaN™
Power Dissipation (Max) -
Package / Case 8-PowerSFN
Technology GaNFET (Gallium Nitride)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C -
Vgs (Max) -
Drive Voltage (Max Rds On, Min Rds On) -
Package Tape & Reel (TR)