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IPAN80R450P7XKSA1

Infineon Technologies

Prodotto No:

IPAN80R450P7XKSA1

Pacchetto:

PG-TO220-3-FP

Batch:

-

Scheda tecnica:

-

Descrizione:

MOSFET N-CH 800V 11A TO220-3-31

Quantità:

Consegna:

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Pagamento:

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In magazzino : 490

Minimo: 1 Multipli: 1

Qty

Prezzo unitario

Prezzo Ext

  • 1

    $2.375

    $2.375

  • 10

    $1.9741

    $19.741

  • 100

    $1.5713

    $157.13

  • 500

    $1.329544

    $664.772

  • 1000

    $1.128106

    $1128.106

  • 2000

    $1.071704

    $2143.408

  • 5000

    $1.031406

    $5157.03

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 770 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 450mOhm @ 4.5A, 10V
Supplier Device Package PG-TO220-3-FP
Vgs(th) (Max) @ Id 3.5V @ 220µA
Drain to Source Voltage (Vdss) 800 V
Series CoolMOS™ P7
Power Dissipation (Max) 29W (Tc)
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPAN80