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IPDD60R055CFD7XTMA1

Infineon Technologies

Prodotto No:

IPDD60R055CFD7XTMA1

Pacchetto:

PG-HDSOP-10-1

Batch:

-

Scheda tecnica:

-

Descrizione:

MOSFET N-CH 600V 52A HDSOP-10

Quantità:

Consegna:

1.webp 4.webp 5.webp 2.webp 3.webp

Pagamento:

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In magazzino : Si prega di richiesta

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2724 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 55mOhm @ 15.1A, 10V
Supplier Device Package PG-HDSOP-10-1
Vgs(th) (Max) @ Id 4.5V @ 760µA
Drain to Source Voltage (Vdss) 600 V
Series CoolMOS™ CFD7
Power Dissipation (Max) 329W (Tc)
Package / Case 10-PowerSOP Module
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Vgs (Max) ±20V
Package Tape & Reel (TR)
Base Product Number IPDD60