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IPW60R170CFD7XKSA1

Infineon Technologies

Prodotto No:

IPW60R170CFD7XKSA1

Pacchetto:

PG-TO247-3-21

Batch:

-

Scheda tecnica:

-

Descrizione:

MOSFET N-CH 650V 14A TO247-3

Quantità:

Consegna:

1.webp 4.webp 5.webp 2.webp 3.webp

Pagamento:

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1199 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 170mOhm @ 6A, 10V
Supplier Device Package PG-TO247-3-21
Vgs(th) (Max) @ Id 4.5V @ 300µA
Drain to Source Voltage (Vdss) 650 V
Series CoolMOS™ CFD7
Power Dissipation (Max) 75W (Tc)
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPW60R170