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IPZ60R099P6FKSA1

Infineon Technologies

Prodotto No:

IPZ60R099P6FKSA1

Pacchetto:

PG-TO247-4

Batch:

-

Scheda tecnica:

-

Descrizione:

MOSFET N-CH 600V 37.9A TO247-4

Quantità:

Consegna:

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Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3330 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 99mOhm @ 14.5A, 10V
Supplier Device Package PG-TO247-4
Vgs(th) (Max) @ Id 4.5V @ 1.21mA
Drain to Source Voltage (Vdss) 600 V
Series CoolMOS™ P6
Power Dissipation (Max) 278W (Tc)
Package / Case TO-247-4
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 37.9A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IPZ60R099