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IRFH6200TRPBF

Infineon Technologies

Prodotto No:

IRFH6200TRPBF

Pacchetto:

8-PQFN (5x6)

Batch:

-

Scheda tecnica:

-

Descrizione:

MOSFET N-CH 20V 49A/100A 8PQFN

Quantità:

Consegna:

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Pagamento:

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In magazzino : 12026

Minimo: 1 Multipli: 1

Qty

Prezzo unitario

Prezzo Ext

  • 1

    $1.8905

    $1.8905

  • 10

    $1.7024

    $17.024

  • 100

    $1.368095

    $136.8095

  • 500

    $1.124002

    $562.001

  • 1000

    $0.931323

    $931.323

  • 2000

    $0.867094

    $1734.188

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 10890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 0.95mOhm @ 50A, 10V
Supplier Device Package 8-PQFN (5x6)
Vgs(th) (Max) @ Id 1.1V @ 150µA
Drain to Source Voltage (Vdss) 20 V
Series HEXFET®
Power Dissipation (Max) 3.6W (Ta), 156W (Tc)
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 49A (Ta), 100A (Tc)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Package Tape & Reel (TR)
Base Product Number IRFH6200