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ISC0804NLSATMA1

Infineon Technologies

Prodotto No:

ISC0804NLSATMA1

Pacchetto:

PG-TDSON-8

Batch:

-

Scheda tecnica:

-

Descrizione:

MOSFET N-CH 100V 12A/59A TDSON-8

Quantità:

Consegna:

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Pagamento:

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In magazzino : 9351

Minimo: 1 Multipli: 1

Qty

Prezzo unitario

Prezzo Ext

  • 1

    $1.4345

    $1.4345

  • 10

    $1.1913

    $11.913

  • 100

    $0.948005

    $94.8005

  • 500

    $0.802199

    $401.0995

  • 1000

    $0.680646

    $680.646

  • 2000

    $0.646618

    $1293.236

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Mounting Type Surface Mount
Product Status Not For New Designs
Rds On (Max) @ Id, Vgs 10.9mOhm @ 20A, 10V
Supplier Device Package PG-TDSON-8
Vgs(th) (Max) @ Id 2.3V @ 28µA
Drain to Source Voltage (Vdss) 100 V
Series OptiMOS™ 5
Power Dissipation (Max) 2.5W (Ta), 60W (Tc)
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 59A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number ISC0804N