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NP35N055YUK-E1-AY

Renesas Electronics America Inc

Prodotto No:

NP35N055YUK-E1-AY

Pacchetto:

8-HSON (5x5.4)

Batch:

-

Scheda tecnica:

-

Descrizione:

MOSFET N-CH 55V 35A 8HSON

Quantità:

Consegna:

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Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature 175°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 6.7mOhm @ 18A, 10V
Supplier Device Package 8-HSON (5x5.4)
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 55 V
Series -
Power Dissipation (Max) 1W (Ta), 97W (Tc)
Package / Case 8-PowerLDFN
Technology MOSFET (Metal Oxide)
Mfr Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number NP35N055