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SPD08P06P

Infineon Technologies

Prodotto No:

SPD08P06P

Pacchetto:

PG-TO252-3

Batch:

-

Scheda tecnica:

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Descrizione:

MOSFET P-CH 60V 8.83A TO252-3

Quantità:

Consegna:

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Pagamento:

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In magazzino : Si prega di richiesta

Si prega di inviare RdO, risponderemo immediatamente.

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Informazioni sul prodotto

Info parametro

Guida per l'utente

Operating Temperature -
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 300mOhm @ 6.2A, 10V
Supplier Device Package PG-TO252-3
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 60 V
Series SIPMOS®
Power Dissipation (Max) 42W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 8.83A (Ta)
Package Tape & Reel (TR)
Base Product Number SPD08P